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Characterization of the blue emission of Tm/Er co-implanted GaN

Published online by Cambridge University Press:  01 February 2011

Iman Roqan ,
Carol Trager-Cowan ,
Ben Hourahine ,
Katharina Lorenz ,
Emilio Nogales ,
Kevin P O’Donnell ,
Robert W Martin ,
Eduardo Alves ,
S Ruffenach  and
Olivier Briot
Iman Roqan
Affiliation:
[email protected], University of Strathclyde, Physics, John Anderson Building, 107 Rottenrow, Glasgow, N/A, G4 0NG, United Kingdom
Carol Trager-Cowan
Affiliation:
[email protected]
Ben Hourahine
Affiliation:
[email protected]
Katharina Lorenz
Affiliation:
[email protected]
Emilio Nogales
Affiliation:
[email protected]
Kevin P O’Donnell
Affiliation:
[email protected]
Robert W Martin
Affiliation:
[email protected]
Eduardo Alves
Affiliation:
dont [email protected]
S Ruffenach
Affiliation:
[email protected]
Olivier Briot
Affiliation:
[email protected]
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Abstract

Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tm and GaN co-implanted with Tm and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (∼ 477 nm) which is due to intra 4f-shell electron transitions (1G4 → 3H6) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200°C. Blue PL emission has also been observed from the sample annealed at 1200°C. To our knowledge, this is the first observation of blue PL emission from Tm implanted GaN samples. Intra-4f transitions from the 1D2 level (∼ 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20–200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples.

Keywords

nitrideion-implantationluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF23-13
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

[1] Steckl, A. J., Heikenfeld, J., Lee, D. S. and Garter, M., Mat. Sci. Eng. B 81, 97 (2001).CrossRefGoogle Scholar
[2] Steckl, A. J. and Zavada, J. M., MRS Bull. 24, 33 (1999).CrossRefGoogle Scholar
[3] Lozykowski, H. J., Jadwisienczak, W. M. and Brown, I, App, J.. Phys. 88, 210 (2000).Google Scholar
[4] Lorenz, K, Wahl, U., Alves, E., Dalmasso, S., Martin, R. W., O'Donnell, K. P., Ruffenach, S. and Briot, O.. Appl. Phys. Lett. 85, 2712 (2004).CrossRefGoogle Scholar
[5] Ziegler, J. F., Biersack, J. P., Littmark, U., The stopping and range of ions in solids (Pergamon Press, New York, 1985).Google Scholar
[6] Lozykowski, H. J., Jadwisienczak, W. M. and Brown, I, Appl. Phys. Lett. 74, 1129 (1999).CrossRefGoogle Scholar
[7] Hommerich, U., Nyein, Ei Ei, Lee, D. S., Steckl, A. J. and Zavada, J. M., Appl. Phys. Lett. 83, 4556 (2003).CrossRefGoogle Scholar
[8] Andreev, T., Hori, Y., Biquard, X., Monroy, E., Jalabert, D., Farchi, A., Tanaka, M., Oda, O., Dang, Le Si, and Daudin, B., Phys. Rev. B 71, 115310 (2005).CrossRefGoogle Scholar
[9] Hömmerich, U., Nyein, Ei Ei, Lee, D. S., Heikenfeld, J., Steckl, A. J. and Zavada, J. M., Mater. Sci. Eng. B 105, 91 (2003).CrossRefGoogle Scholar
[10] Lee, D. S. and Steckl, A. J., Appl. Phys. Lett. 83 2094 (2003).CrossRefGoogle Scholar
[11] Lorenz, K., Wahl, U., Alves, E., Dalmasso, S., Martin, R.W., O'Donnell, K.P., MRS Symp. Proc. 798, Y5.4 (2004).CrossRefGoogle Scholar
[12] Seltzer, M. D., Gruber, J. B. and Hills, M. E., J. Appl. Phys. 74, 2821 (1993).CrossRefGoogle Scholar
[13] Lozykowski, H. J., Phys. Rev. B 48, 17758 (1993).CrossRefGoogle Scholar
[14] Kenyon, A.J., Progress in Quantum Electronics 26, 225 (2002).CrossRefGoogle Scholar