Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T18:05:44.412Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Silicon Fusion Bonds Using a Four-Point Bend Specimen

Published online by Cambridge University Press:  17 March 2011

Kevin T. Turner ,
Arturo A. Ayon ,
Dongwon Choi ,
Bruno Miller  and
S. Mark Spearing
Kevin T. Turner
Affiliation:
Department of Mechanical Engineering Massachusetts Institute of Technology, Cambridge, MA.
Arturo A. Ayon
Affiliation:
Currently with Sony Semiconductor, San Antonio, TX Massachusetts Institute of Technology, Cambridge, MA.
Dongwon Choi
Affiliation:
Department of Materials Science and Engineering Massachusetts Institute of Technology, Cambridge, MA.
Bruno Miller
Affiliation:
Department of Aeronautics and Astronautics Massachusetts Institute of Technology, Cambridge, MA.
S. Mark Spearing
Affiliation:
Department of Aeronautics and Astronautics Massachusetts Institute of Technology, Cambridge, MA.
Get access

Abstract

The increased number of MEMS devices that are fabricated by bonding two or more bulk micromachined silicon wafers has highlighted the need to produce reliable silicon fusion bonds. The current study focuses on employing a four-point bend delamination specimen to measure silicon fusion bond strength as a function of processing conditions. The specimen, which is composed of two bonded layers and an initial notch, permits the measurement of a mixed-mode critical strain energy rate, GC, at the interface. This specimen geometry is advantageous because it does not require measurement of crack length to calculate the strain energy release rate and is insensitive to damage near the specimen edges. The fact that the interface is loaded under mixed-mode conditions presents difficulties in achieving stable crack propagation in well bonded specimens. Attempts were made to eliminate this problem by reducing the effective bond toughness by etching shallow grooves in the wafer surfaces to reduce the bonded area. Testing revealed that while this approach reduced the effective toughness of the interface, it did not prevent crack deflection in well bonded samples. Despite the limitations of the specimen, data was obtained for silicon fusion bonds fabricated under various annealing and contacting conditions. Test results indicate an increase in bond toughness with annealing temperature and time. The data also suggests that the contacting pressure and duration have little effect on bond quality. The specimen, while limited to characterizing bonds with lower toughness, proved straightforward to fabricate and test.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 657: Symposia EE – Materials Science of Microelectromechanical Systems (MEMS) Devices III , 2000 , EE6.3
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Klaassen, E.H., Petersen, K., Noworolski, M.J., Logan, J., Maluf, N.I., Brown, J., Storment, C., McCulley, W., and Kovacs, G.A., Sensors and Actuators, A52, 132–9 (1996).Google Scholar
2. Schmidt, M.A., Proc. of the IEEE, 86 (8), 1575-85 (1998).Google Scholar
3. Gösele, U., and Tong, Q.-Y., Annu. Rev. Mater. Sci., 28, 215–41 (1998).Google Scholar
4. Farrens, S.N., Roberds, B.E., Smith, J.K., and Hunt, C.E., Proc. 2nd Int. Symp. Semiconductor Wafer Bonding, 93–29, 81–95 (1993).Google Scholar
5. Abe, T., Takei, T., Uchiyama, A., Yoshizawa, K., and Nakazato, Y., Jpn. J. Appl. Phys., 29 (12), 2311–2314 (1990).Google Scholar
6. Shimbo, M., Furukawa, K., Fukuda, K., and Tanzawa, K., J. Appl. Phys., 60 (8), 2987–9 (1986).Google Scholar
7. Mazara, W.P., Goetz, G., Caviglia, A., and McKitterick, J.B., J. Appl. Phys., 64 (10), 4943–50 (1988).Google Scholar
8. Martini, T., Steinkirchner, J., and Gösele, U., J. Electrochem Soc., 144 (1), 354–357 (1997).Google Scholar
9. Charalambides, P.G., Lund, J., Evans, A.G., and McMeeking, R.M., J. Appl. Mech., 56, 77–82 (1989).Google Scholar
10. Tsau, C.H., Schmidt, M.A., and Spearing, S.M., Materials Science of Microelectromechanical Systems (MEMS) Devices II (Mater. Res. Soc. Proc. 605, Pittsburgh, PA, 1999), 171–176.Google Scholar
11. He, M.-Y. and Hutchinson, J.W., Int. J. Solids Structures, 25 (9), 1053–1067 (1989).Google Scholar