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Characterization of Pseudomorphic Si/Si1-xGex Multi-Quantum Well Structures by Spectroscopic Ellipsometry

Published online by Cambridge University Press:  21 February 2011

Roger T Carline ,
Christopher Pickering ,
Weng Y Leong  and
David J Robbins
Roger T Carline
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs, WR14 3PS, UK.
Christopher Pickering
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs, WR14 3PS, UK.
Weng Y Leong
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs, WR14 3PS, UK.
David J Robbins
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs, WR14 3PS, UK.
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Abstract

Reference dielectric function spectra,ε-ε1+ iε2, for strained Si1-x Gex have been generated for 0<x<0.255. Used in an interpolation procedure they allow multilayer analysis of pseudo-dielectric function spectra, <ε <ε1 + i<ε2, measured by spectroscopic ellipsometry (SE) on strained Si1-xGex/Si structures of arbitrary composition, x≤0.255. These include multi-quantum well (MQW) structures important for application as infrared detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 157
Copyright
Copyright © Materials Research Society 1994

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