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The Characterization of Intentional Dopants in HgCdTe using Sims, Hall-Effect, and C-V Measurements

Published online by Cambridge University Press:  22 February 2011

L. E. Lapides ,
R. L. Whitney  and
C. A. Crosson
L. E. Lapides
Affiliation:
Santa Barbara Research Center, Goleta, CA 93117
R. L. Whitney
Affiliation:
Santa Barbara Research Center, Goleta, CA 93117
C. A. Crosson
Affiliation:
Santa Barbara Research Center, Goleta, CA 93117
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Abstract

The properties of selected dopants in liquid-phase epitaxial (LPE) layers of HgCdTe have been studied using secondary ion mass spectrometry (SIMS), Hall-effect, and capacitance-voltage (C-V) measurements. The layers were grown from Hg-rich melts on {111}-oriented CdTe and CdZnTe single-crystal substrates. Diodes, for the C-V measurements, were homojunctions formed by ion implantation or heterojunctions formed by the growth of a second layer on the base layer. Dopant concentration distributions in both single- and double-layer structures were characterized by SIMS and C-V measurements. The dopant profiles measured by SIMS were quantified using relative sensitivity factors calculated from ion implanted impurity profiles measured on standard reference samples. Using specialized SIMS techniques, such as molecular ion spectrometry, As concentrations as low as 2 × 1015 cm−3 have been measured. In the HgCdTe:In/HgCdTe:As system minimal dopant interdiffusion is observed in SIMS profiles. The growth of the second layer has insignificant effect on the As distribution in the base layer, and C-V data indicate that the electrical properties change only slightly. Carrier types and concentrations were determined by Hall effect and C-V measurements. Good agreement between dopant concentrations and carrier concentrations was observed, indicating 100% activation of the dopant atoms, for all dopants studied. Examples of implant calibration profiles, dopant concentration distributions, carrier concentration vs temperature measurements, and 1/C2 vs V data are presented, along with graphs and tables comparing dopant profiles with electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 365
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Kalisher, M.H., Proceedings of the Sixth American Conference on Crystal Growth, Atlantic City, NJ, July, 1984; to be published.Google Scholar
2. Radford, W.A. and Jones, C.E., Proceedings of the IRIS Detector Specialty Conference, Seattle, WA, August, 1984; to be published.Google Scholar
3. Lapides, L.E., Whiteman, G.L., and Wilson, R.G., Thin Films and Interfaces II, Baalin, J.E.E., Campbell, D.R., and Chu, W.K., eds. (North Holland, New York, 1984).Google Scholar
4. Lapides, L.E., Surf. Interface Anal.; to be published.Google Scholar
5. Lou, L.F. and Frye, W.H., J. Appl. Phys. 56 2253 (1984).Google Scholar
6. Goodman, A.M., J. Appl. Phys. 34 329 (1963).Google Scholar
7. Wiley, J.D. and Miller, G.L., IEEE Trans. Electron Dev. ED–22 265 (1975).CrossRefGoogle Scholar
8. Sze, S.M., Physics of Semiconductor Devices, 2nd edition (John Wiley and Sons, New York, 1981), p. 79.Google Scholar
9. Bubulac, L.O., Tennant, W.E., Shin, S.H., Wang, C.C., Lanir, M., Gertner, E.R., and Marshall, E.D., Jpn. J. Appl. Phys. Suppl. 19–1 495 (1980).Google Scholar
10. Kolodny, A. and Kidron, I., IEEE Trans. Electron Dev. ED–27 37 (1980).Google Scholar