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Characterization of GaAs/Si Interface Structure by X-Ray Diffraction
Published online by Cambridge University Press: 21 February 2011
Abstract
By measuring the intensity profiles along the crystal truncation rods of a Si(001) substrate, we obtain the depth sensitivity necessary for x-ray diffraction measurements of the structure of its interface with a thick GaAs overlayer which is epitaxial to, but not in registry with the substrate. By comparing the diffraction with a model based on a grid of misfit dislocations, we find that the atoms at the interface have a root mean square displacement of 1.09±0.1Å from this ideal structure, and that the interface has a roughness of 2.9±1 Å. The diffraction indicates an anomalously small strain perpendicular to the interface in the GaAs near the interface.
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- Copyright © Materials Research Society 1991