The low temperature deposition (400–650° C) of AlxGa1-xN films by metalorganic chemical vapor deposition (MOCVD) was characterized. Triethylgallium (TEG), trimethylaluminum (TMA), and ammonia (NH3) served as the precursors and both sapphire and silicon as the substrates with helium as the carrier gas. The deposition was operated at the atmospheric pressure. The crystallinity was improved even at low temperatures when AlxGal-xN was grown on a thin buffer layer of A1N at 400° C. With an AlxGa1-xN/AIN layered structure, epitaxial growth of AlxGa1-xN was obtained at 650° C on sapphire substrates. Auger results showed that the Al fraction x was less than 0.1. X-ray diffraction indicated a strong peak at 2θ =34.9 degrees for the (0002) planes from the film on sapphire substrates. The electron channelling pattern (ECP) of the film produced at 650° C revealed a 6 fold symmetry contrast pattern indicating the epitaxial growth of the film. Photoluminescence (PL) showed a dominant emission at 353 nm for the film on sapphire substrate. Surface morphology examined by SEM was featureless for the film produced at 500° C, while a relatively rough surface can be seen on the film produced at 650° C (5, 000x). The band gap was measured as 3.56 eV. The Al mole fraction x in the alloy was observed to be lower than that in the gas phase.