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Catalytic Oxidation of Silicon Nitride thin films Using Potassium*

Published online by Cambridge University Press:  25 February 2011

J. W. Rogers Jr ,
D. S. Blair  and
C. H. F. Peden
J. W. Rogers Jr
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
D. S. Blair
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
C. H. F. Peden
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
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Abstract

Thin silicon nitride films on a Si(100) substrate have been oxidized using potassium in a low thermal budget process. The presence of potassium on the SisN4 surface greatly lowers the temperature-time requirements for oxidation as compared with direct thermal oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 223
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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