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Carrier Transport Through Grain Boundaries in Hydrogenated Microcrystalline Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
To analyse the influence of the grain boundaries (gb) on the transport of carriers in hydrogenated microcrystalline silicon (μC-Si:H) the ambipolar diffusion length (LLMB) was measured by SSPG. In addition, the films were characterised by photo-conductivity, dark conductivity activation energy, Urbach energy (determined by CPM), hydrogen effusion, Raman spectroscopy, X-ray scattering and optical transmission.
The sample series was prepared by PECVD of SiH4 diluted with increasing H2 content. Taking the structural information by Raman spectra and X-ray into account, we explain our optical and activation energy measurements within a three-phase-model (amorphous phase, crystalline phase, gb) and a Fermi level pinning in μc-Si:H.
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- Copyright © Materials Research Society 1993
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