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Carrier Transport in Compositionally Modulated a-Si:H Based Superlattice Structures
Published online by Cambridge University Press: 26 February 2011
Abstract
Results are presented on the electron transport, parallel and perpendicular to the layers, in a Ge:H/a-Si:H superlattices. The dependence of this carrier transport on the optical gap shifts, the heterojunction band alignment, as well as the bulk properties and thickness of the Ge,Si layers is established. No significant change in the transport mechanisms at the band edge or Ge with dr was detected.
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- Copyright © Materials Research Society 1987
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