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Carbon Rich a-Si1-xCx:H Films: An Investigation On Radiative Recombination Properties
Published online by Cambridge University Press: 10 February 2011
Abstract
Amorphous silicon-carbon a-Sil-xCx:H films with x in the range 0.3-1 have been deposited by PECVD of SiH4+CH4 and SiH4+C2H2 gas mixtures. Photoluminescence characterizations have been performed, together with optical measurements. The dependence of radiative recombination properties as a function of x and as a function of damage introduced by H+-ion irradiation has been presented and correlated with the changes in the absorption spectra.
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- Copyright © Materials Research Society 1998
References
REFERENCES
3
Kanicki, J., in “Amorphous and Microcrystalline Semiconductor Devices” (Artech House, Boston, 1991) Vol. 2.Google Scholar
4
Giorgis, F., Giuliani, F., Pirri, C.F.
Rigato, V., Tresso, E., Zandolin, S., “Properties of Amorphous Silicon and its Alloys” edited by Searle, T. (IEE, United Kingdom, 1998).Google Scholar
10
Giorgis, F., Giuliani, F., Pirri, C.F.
Tagliaferro, A., Tresso, E., Appl. Phys. Lett.
72 (1998).Google Scholar
11
Glesener, J.W.
Anthony, J.M.
Cunningham, A., Diamond and Related Mat.
2, 670 (1993).Google Scholar
12
Morigaki, K., Hirabayashi, I., Nakayama, M., Nitta, S., Shimakawa, K., Solid State Comm.
33, 851 (1980).Google Scholar