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Carbon Nitride Formation by Plasma Assisted Ion Beam Deposition

Published online by Cambridge University Press:  21 February 2011

G.S. Tompa ,
I.H. Murzin ,
S.I. Kim ,
Y.O Ahn ,
B. Gallois ,
T.E. Fischer  and
E.W. Forsythe
G.S. Tompa
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Av., Piscataway, NJ 08854, murzin@aol. corn
I.H. Murzin
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Av., Piscataway, NJ 08854, murzin@aol. corn
S.I. Kim
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Av., Piscataway, NJ 08854, murzin@aol. corn
Y.O Ahn
Affiliation:
Stevens Institute of Technology, Castle Point Station, Hoboken, NJ 07030
B. Gallois
Affiliation:
Stevens Institute of Technology, Castle Point Station, Hoboken, NJ 07030
T.E. Fischer
Affiliation:
Stevens Institute of Technology, Castle Point Station, Hoboken, NJ 07030
E.W. Forsythe
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Av., Piscataway, NJ 08854, murzin@aol. corn
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Abstract

Theoretical works have indicated that carbon nitride, in a β-C4N4 phase, would have optical and mechanical properties comparable to or exceeding those of diamond. In this effort, the formation of carbon nitride thin films was investigated using a Plasma Assisted Ion Beam Deposition (PAIBD). In this technique, a C- ion beam combined with a N2 or NH3 RF plasma source is used to synthesize carbon nitride films. These films were investigated as a function of both C- ion beam energy and the power of the plasma source. The C- ion energy was found to be a key parameter in the formation of carbon nitride. The films were evaluated by a variety of diagnostic techniques including Raman, AES, XRD and FTIR. Analysis confirms high nitrogen concentration in the synthesized films and the major portion of carbon being single bonds in the sp3 bond configuration, which is a characteristic of the tetrahedral -C3N4 phase. Tribology tests confirmed that the friction coefficient and the wear rate are comparable to diamond. The results show that the higher C- ion beam energy (-150 eV) forms insulating films with the highest single bond percentages in the range studied. We believe beam energy control is critical to the types of bonds formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 545
Copyright
Copyright © Materials Research Society 1996

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References

1 Liu, A.Y. and Cohen, M.L., Science 245, 841 (1989); See also, A.Y. Liu and M.L. Cohen, Phys. Rev. B41 (15), 10727 (1990); M. L. Cohen, Science 261, 307 (1993).Google Scholar
2 Niu, C., Lu, Y. Z. and Lieber, C. M. Science, 26, 334 (1993).Google Scholar
3 Chen, M.Y., Lin, X., Dravid, V.P., Chung, Y.W., Wong, M.S., and Sproul, W.D., Surface and Coatings Technology 54/55, 360 (1992); M.Y. Chen, X. Lin, V.P. Dravid, Y.W. Chung, M.S. Wong, and W.D. Sproul, STLE Tribology Transactions 36 (3), 491 (1993); D. Li, Y-W Chung, M-S Wong, and W.D. Sproul, J. Appl. Phys. 74(1), 219(1993).Google Scholar
4 Matsumoto, O., Kotaki, T., Shikano, H., Takemura, K., and Tanaka, S., J. Electrochem. Soc. 141 (2), L16 (1994).Google Scholar
5 Bousetta, A., Lu, M., Bensaoula, A., and Schultz, A., Appl. Phys. Lett. 65 (6), 696 (1994).Google Scholar
6 Nguen, J. and Jeanloz, R., (1995) in press.Google Scholar
7 Ricci, M., Trinquecoste, M., Auguste, F., Canet, R., Delhaes, P., Guimon, C., Pfister-Guilouzo, G., Nysten, B., and Issi, J.P., J. Mater. Res. 8 (3), 480 (1993).Google Scholar
8 SMI - BMDO Phase 1 Contract No.: DAAH04-93-C-0022, Final Report.Google Scholar
9 Kaufman, J.H., Metin, S., and Saperstein, D.D.. Phys. Rev B, 39, 13053 (1991)Google Scholar
10 Dorfman, B., Abraizov, M., Pypkin, P., Strongin, M., Yang, X.-Q., Yan, D., Pollak, F.H., Grow, J., Levy, R., Mat. Res. Soc. Symp. 349, 547 (1994)Google Scholar
11 Han, H.-X. and Feldman, B.J., Sol. State Comm., 65, 921 (1988)Google Scholar
12 Tuinstra, F. and Koenig, J.L., J. Chem. Phys., 53, 1126 (1970) C.J. Torng, J.M. Sivertsen, J.H. Judy, and C. Chang, J. Mater. Res. 5 (11), 2490 (1990).Google Scholar
13 Yoshikawa, M., Katagri, G., Ishitani, H., and Akamatsu, T., J. Appl. Phys., 64 (11) 6464 (1988).Google Scholar