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Calculations of Dielectric Constant for AlGaInAs Quaternary Semiconductor Alloy in the Transparent Region and Above (0.4-4.0eV)

Published online by Cambridge University Press:  21 March 2011

M. Linnik  and
A. Christou
M. Linnik
Affiliation:
Department of Materials and Nuclear Engineering and Materials Research Science and Engineering Center, University of Maryland, College Park MD 20742
A. Christou
Affiliation:
Department of Materials and Nuclear Engineering and Materials Research Science and Engineering Center, University of Maryland, College Park MD 20742
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Abstract

The modeling of the spectral behavior of the refractive index of AlGaInAs quaternary IIIV semiconductor alloy in the energy range from 0.4 to 4eV, including the transparent region, is presented. The extended model of interband transition contributions incorporates not only the fundamental absorption edge contribution to the dielectric function, but also contributions from higher energy and indirect transitions. It is demonstrated that indirect energy transitions must be included in the calculations of the complex dielectric function of the material in the transparent region. Indirect transitions from different critical points in the Brillouin zone are treated separately. The comparison between the theoretical refractive indices and the experimental data for AlGaInAs alloy is presented. These calculations have been applied to the design of Bragg mirrors with the highest refractive index contrast for heterostructure lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.27.1
Copyright
Copyright © Materials Research Society 2002

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