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Behaviour of Implanted Hydrogen in Gallium Phosphide Single Crystals

Published online by Cambridge University Press:  26 February 2011

J. M. Zavada ,
R. G. Wilson ,
S. W. Novak ,
S. J. Pearton  and
A. R. Von Neida
J. M. Zavada
Affiliation:
European Research Office, London NW1 5TH, UK
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
S. W. Novak
Affiliation:
C. Evans & Associates, Redwood City, CA 94063
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. R. Von Neida
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

In this paper we report on the depth distributions of implanted hydrogen in GaP crystals and the subsequent changes produced by post- implantation furnace annealing. A sulfur doped n+ GaP wafer has been implanted with 333 keV protons to a fluence of 5E15/cm+2. A similar wafer was implanted with 350 keV deuterons to the same fluence. Portions of each wafer have been furnace annealed at temperatures up to 500°C. The implanted hydrogen and the dopant S atoms were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the redistribution of hydrogen begins with annealing at about 300°C and proceeds both towards the surface and deeper into the substrate. The overall behavior is similar to that found previously for hydrogen in GaAs. However, in GaP crystals this redistribution begins at a higher temperature and proceeds more slowly in the implanted region. Based on the SIMS profiles, diffusion coefficients for hydrogen migrating into substrate are obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 457
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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