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Atomistic Analysis of the Role of Silicon Interstitials in Boron Cluster Dissolution

Published online by Cambridge University Press:  17 March 2011

Maria Aboy ,
Lourdes Pelaz ,
Luis A. Marqués ,
Pedro López  and
Juan Barbolla
Maria Aboy
Affiliation:
Dpto. de Electrónica, Universidad de Valladolid, Campus Miguel Delibes, 47011 Valladolid, Spain
Lourdes Pelaz
Affiliation:
Dpto. de Electrónica, Universidad de Valladolid, Campus Miguel Delibes, 47011 Valladolid, Spain
Luis A. Marqués
Affiliation:
Dpto. de Electrónica, Universidad de Valladolid, Campus Miguel Delibes, 47011 Valladolid, Spain
Pedro López
Affiliation:
Dpto. de Electrónica, Universidad de Valladolid, Campus Miguel Delibes, 47011 Valladolid, Spain
Juan Barbolla
Affiliation:
Dpto. de Electrónica, Universidad de Valladolid, Campus Miguel Delibes, 47011 Valladolid, Spain
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Abstract

Boron implantation into preamorphized Si, followed by low temperature solid phase epitaxial (SPE) regrowth produces high activation combined with low diffusion. However, in the presence of high B concentrations, the activation obtained after the SPE regrowth only can reach concentrations in the order of a few times 1020 cm−3, and even more deactivation occurs during additional annealing. We have analyzed the role of the Si interstitials injected from the end of range (EOR) damage in B deactivation and reactivation by atomistic simulations. We have shown that the B cluster evolution can be clearly correlated to the evolution of Si interstitial defects at EOR. This is also compatible with B cluster stabilization in the presence of excess Si interstitials, observed in oxidation experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C7.3
Copyright
Copyright © Materials Research Society 2004

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References

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