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a-(Si, Ge):H, F Alloys Prepared from SiH4 and GeF4

Published online by Cambridge University Press:  28 February 2011

D. Slobodin ,
S. Aljishi ,
Y. Okada ,
D.-S. Shen ,
V. Chu  and
S. Wagner
D. Slobodin
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
S. Aljishi
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
Y. Okada
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
D.-S. Shen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton NJ 08544
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Abstract

The properties of a-(Si, Ge):H, F alloys prepared by glow discharge deposition from SiH4 and GeF4 are described. The measured IR absorption spectra, sub-gap absorption spectra, dark conduction activation energies, carrier drift mobilities and deep trapping lifetimes of these alloys are similar to those of alloys prepared from SiF4, GeF4, and H2. However, they have over an order of magnitude lower photoconductivity over most of the composition range. Infrared absorption measurements indicate that these alloys have a fluorine content less than 1.5 at.% and a Si-H2 content that increases with germanium concentration.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 275
Copyright
Copyright © Materials Research Society 1986

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