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Anomolous Behavior of DX Centers in Compositionally Graded GaAs/AlXGa1-XAs:Si Heterojunctions
Published online by Cambridge University Press: 21 February 2011
Abstract
DX centers in compositionally graded GaAs/AlxGa1-x As: Si heterojunctions have been studied using Deep Level Transient Spectroscopy, and Capacitance-Voltage measurements as a function of temperature. We have found that the DLTS peak position moves as the filling pulse amlplitude is increased and that the capture cross section also changes. Three distinct regions characterized by a constant rate of peak movement are seen. The barrier height of the applied Schottky diodes and the carrier concentration profiles were tracked from 300 K to 100 K. Results from graded junctions were compared to results from abrupt junctions.
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- Copyright © Materials Research Society 1994