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Annealing of Pb-Implanted SrTiO3 in The Presence of Water Vapour: A Study Using D218O Labelling

Published online by Cambridge University Press:  28 February 2011

J. C. McCallum ,
T. W. Simpson ,
I. V. Mitchell ,
J. Rankin  and
L. A. Boatner
J. C. McCallum
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Victoria, GPO Box 2476V, 3001, Australia
T. W. Simpson
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, Canada, N6A3K7
I. V. Mitchell
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, Canada, N6A3K7
J. Rankin
Affiliation:
Mary Ingraham Bunting Institute, Cambridge, Massachusetts
L. A. Boatner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831
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Abstract

We report new measurements of the regrowth behaviour of Pb-implanted SrTiO3 crystals in the presence of water vapour. Doubly labelled water vapour, D218O, at greater than 95% enrichment in each isotope has been added to the annealing ambient and depth profiles of D and 18O have been obtained from the regrown crystals using secondary ion mass spectrometry (SIMS). The D and 18O content has also been measured by nuclear reaction analysis (NRA) using the reactions D(3He,p)4 He and 18O(p,α)15 N. The crystals were regrown in a conventional furnace under a controlled gas ambient and time-resolved optical reflectivity (TRR) was used to dynamically monitor the regrowth rate during the anneal. An enhancement of the solid-phase epitaxial regrowth rate is observed when water vapour is added to the annealing ambient. This rate increase is accompanied by incorporation of D throughout the regrown layer. 18O is incorporated into the lattice but does not appear to penetrate deep enough to influence the regrowth rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 419
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Buchal, C., Ashley, P.R., and Appleton, B.R., J. Mater. Res. 2, 222 (1987).CrossRefGoogle Scholar
[2] Rankin, J., McCallum, J.C., Boatner, L.A. and White, C.W., in Selected Topics in Electronic Materials, edited by Appleton, B.R., Brown, W.L., Biegelsen, D.K. and Knapp, J.A. (Materials Research Society, Pittsburgh, PA 1988) p. 207.Google Scholar
[3] Fratello, V.J., Hays, J.F. and Turnbull, D., J. Appl. Phys. 51, 4718 (1980).Google Scholar
[4] Fratello, V.J., Hays, J.F., Spaepen, F. and Turnbull, D., J. Appl. Phys. 51 6160 (1980).Google Scholar
[5] McCallum, J.C., Rankin, J., White, C. W. and Boatner, L.A., Nuclear Instruments and Methods B 46, 98 (1990).Google Scholar
[6] Rankin, J., McCallum, J.C. and Boatner, L.A., submitted to Journal of Materials Research.Google Scholar
[7] Waser, R., Ber. Bunsenges. Phys. Chem. 90, 1223 (1986).Google Scholar