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Annealing Effects on Nanoscratch Behavior of CaF2 Thin Films Growth on Si(111)
Published online by Cambridge University Press: 10 February 2011
Abstract
CaF2 films with 40 nm depth were grown on Si(111) wafers by thermal evaporation in UHV machine and submitted at a RTA in situ. Three different lateral forces were observed to affect behavior during the scratch. This corresponded to three different compositions at different profiles: the CaF2 film, the interface region and the silicon substrate. The XPS spectrum shows the presence of calcium silicide at the interface region. The X-ray reflectivity measurements show that the interfaces are sharpest in annealed samples. This is in accordance with nanoscratch results, showing that the intermediary value for the friction coefficient is due the calcium silicide interface layer.
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- Copyright © Materials Research Society 1998