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Analysis of Si-SiO2 Interfacial-Energy Hierarchy via Mixed-Phase Solidification of Si Films on SiO2

Published online by Cambridge University Press:  07 October 2015

Ying Wang ,
Monica D. Chahal ,
J. J. Wang ,
A. B. Limanov ,
A. M. Chitu  and
James S. Im
Ying Wang
Affiliation:
Dept. of Applied Physics and Applied Mathematics, Columbia University, NY, NY 10027, USA
Monica D. Chahal
Affiliation:
Dept. of Applied Physics and Applied Mathematics, Columbia University, NY, NY 10027, USA
J. J. Wang
Affiliation:
Dept. of Applied Physics and Applied Mathematics, Columbia University, NY, NY 10027, USA
A. B. Limanov
Affiliation:
Dept. of Applied Physics and Applied Mathematics, Columbia University, NY, NY 10027, USA
A. M. Chitu
Affiliation:
Dept. of Applied Physics and Applied Mathematics, Columbia University, NY, NY 10027, USA
James S. Im
Affiliation:
Dept. of Applied Physics and Applied Mathematics, Columbia University, NY, NY 10027, USA
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Abstract

We have experimentally investigated the anisotropy of Si-SiO2 interfacial energy by leveraging the mixed-phase solidification (MPS) method. By examining the microstructure evolution resulting from partial-melting-and-solidification cycles, and interpreting the changes in the surface-orientation distribution of the grains in terms of the thermodynamic model, we have identified the orientation-dependent hierarchical order of Si-SiO2 interfacial energies, σ{hkl}, as: σ{100} < σ{310} < σ{113} < σ{112} < σ{221} < σ{210}∼σ{331} < σ{111}, σ{110}.

Keywords

Silaser annealingthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1770: Symposium A – Emerging Silicon Science and Technology , 2015 , pp. 55 - 60
Copyright
Copyright © Materials Research Society 2015 

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References

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