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Analysis and Calibration of the Flow Characteristics of A Pressure Controlled Vapor Source For Gas Source Doping: CdTe:l
Published online by Cambridge University Press: 16 February 2011
Abstract
A pressure controlled vapor source was developed for the gas source doping of (Hg,Cd)Te alloys. The dopant source has been subjected to extensive tests, and the flow characteristics determined. The dopant source was used to control the flow rates of ethyliodide for the n-type doping of CdTe. Highly conductive CdTe:l films were grown by molecular beam epitaxy.
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- Copyright © Materials Research Society 1991
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