Hostname: page-component-7bb8b95d7b-5mhkq Total loading time: 0 Render date: 2024-10-04T18:45:15.006Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphous Silicon Alloy Punch-Through Diodes for Display Applications

Published online by Cambridge University Press:  26 February 2011

W. den Boer ,
S. Guha ,
A. Kawasaki  and
Z. Yaniv
W. den Boer
Affiliation:
Energy Conversion Devices, Inc., 1675 W. Maple Rd, Troy, MI 48084
S. Guha
Affiliation:
Energy Conversion Devices, Inc., 1675 W. Maple Rd, Troy, MI 48084
A. Kawasaki
Affiliation:
Work performed at Energy Conversion Devices, Nippon Steel Corporation, Japan
Z. Yaniv
Affiliation:
Ovonic Imaging Systems, Inc., 1937 Barrett St., Troy, MI 48084
Get access

Abstract

The current-voltage characteristics of amorphous silicon alloy n-π-n and p-i-p diodes have been investigated. These diodes show highly nonlinear conduction characteristics which are attributed to the punch-through effect. The dependence of the non-linearity on the thickness and doping of the intermediate active layer support this interpretation. An experimental 108 × 108 pixel liquid crystal display was built with punch-through diodes as pixel switches.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 615
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sze, S.M., Physics of Semiconductor Devices, (John Wiley and Sons, New York, 1981), pp 149, 478, 618.Google Scholar
2. Guha, S., U.S. patent pending.Google Scholar
3. Spear, W.E., et. al., Phil. Nag. B 38, 303 (1978).Google Scholar
4. den Boer, W. and Guha, S., J. Appl. Phys. 57, 5539 (1985).Google Scholar
5. den Boer, W. and Pop, A.F.P., Solid State Comm. 45, 881 (1983).Google Scholar
6. Ast, D. G., IEEE Trans. Electron Devices ED-30, 532 (1983).Google Scholar
7. Yaniv, Z. et. al., Proc. 1985 Int. Display Research Conf., San Diego, October 15-17, 1985, p. 76.Google Scholar
8. Dresner, J., Appl. Phys. Lett. 48, 1006 (1986).Google Scholar
9. Togashi, S. et. al., Proc. 1984 Int. Display Research Conf., p. 141.Google Scholar