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Amorphous Phase Formation and Recrystallization in Ion-Implanted Silicides
Published online by Cambridge University Press: 25 February 2011
Abstract
Ion implantation induced phase transformations and recrystallization during post-annealing in CoSi2, CrSi2, and Pd2Si are studied. All three silicides are found to reorder at about 1/3 the melting point of the silicide. We speculate that ion-implanted silicides recrystallize by the same mechanism and that amorphous phases produced by implantation are unstable rather than metastable.
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- Copyright © Materials Research Society 1984
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