Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-06T07:58:07.041Z Has data issue: false hasContentIssue false
  • English
  • Français

Aluminum Particle Formation in the GaS Phase of a Low Pressure Chemical Vapor Deposition Reactor Using Dimethylethylamine Alane (AlH3) as a Precursor

Published online by Cambridge University Press:  22 February 2011

Michael G. Simmonds ,
Wayne L. Gladfelter ,
Haojiang Li  and
Peter H. McMurry
Michael G. Simmonds
Affiliation:
University of Minnesota, Departments of Chemistry, Minneapolis, Minnesota 55455
Wayne L. Gladfelter
Affiliation:
University of Minnesota, Departments of Chemistry, Minneapolis, Minnesota 55455
Haojiang Li
Affiliation:
Mechanical Engineering, Minneapolis, Minnesota 55455
Peter H. McMurry
Affiliation:
Mechanical Engineering, Minneapolis, Minnesota 55455
Get access

Abstract

Particle formation in the gas phase during the chemical vapor deposition of Al using dimethylethylamine alane was studied. Typical sizes of the crystalline Al particles monitoredwere in the range 20 nm to 1000 nm. Introducing trace amounts of H2O, CO and O2 into the reactor during the flow of the precursor caused an increase in the number of particles. Our results suggested that Al particle formation was induced by impurities in the gas phase although competing mechanisms could not be ruled out.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 317
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. O'Hanlon, J.F. and Parks, H.G., J. Vac. Sci. Technol. A 10, 1863 (1992).Google Scholar
2. Simmonds, M.G., Phillips, E.C., Hwang, J.-W., and Gladfelter, W.L., Chemtronics 5, 155 (1991).Google Scholar
3. Simmonds, M.G., Gladfelter, W.L., Rao, N., Szymanski, W.W., Ahn, K.-H. and McMurry, P.H., J. Vac. Sci. Technol. A 9, 2782 (1991).Google Scholar
4. Cox, D.M., Trevor, D.J., Whetten, R.L. and Kaldor, A., J. Phys. Chem. 92, 421 (1988).Google Scholar
5. Saxena, S.C. and Joshi, R.K., Thermal Accomodation and Adsorption Coefficients of Gases (Hemisphere Publishers, New York, 1989).Google Scholar
6. Dubois, L.H., Zegarski, B.R., Kao, C.-T., Nuzzo, R.G., Surf. Sci. 236, 77 (1990).Google Scholar
7. Dubois, L.H., Zegarski, B.R., Gross, M.E., Nuzzo, R.G., Surf. Sci. 244, 89 (1991).Google Scholar
8. Nechiporenko, G.N., Petukhova, L.B., Rozenberg, A. S., Bull. Acad. Sci. 24, 1584(1975).Google Scholar