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AlGaAs/GaAs Double-Heterostructure Optical Waveguide on Si Substrates

Published online by Cambridge University Press:  21 February 2011

T. Yuasa ,
M. Umeno ,
S. Sakai ,
N. Wada  and
Y. Ueta
T. Yuasa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan.
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan.
S. Sakai
Affiliation:
Department of Electric and Electronic Engineering, Tokushima University, Minami-josanjima, Tokushima 770, Japan.
N. Wada
Affiliation:
on leave from Mastushita Kotobuki Electronic Industries Ltd.
Y. Ueta
Affiliation:
Department of Electric and Electronic Engineering, Tokushima University, Minami-josanjima, Tokushima 770, Japan.
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Abstract

AlGaAs/GaAs double-heterostructure (DH) optical waveguides on Si substrates which is important in future opto-electric integrated circuits (OEICs) utilizing both Si and GaAs devices is analyzed by the effective index method and fabricated by metalorganic chemical vapor deposition (MOCVD).

The structures contain 0.8-μm-thick GaAs guiding layer sandwiched between two 1-μm-thick Al0.1Ga0.9 As cladding layers. All the layers were grown by MOCVD on (100) 2°-off Si substrates by two step method. A top cladding layer was etched leaving 2-μm wide mesa-stripes. The etched depth was changed from 0.65 to 0.90 μm. The field profiles were calculated and measured for 1.3 μm wavelength light. The measured and calculated profiles agree quite well with each other for all the. waveguides having different mesa height. This agreement makes us possible to design more complicated AlGaAs/GaAs waveguides and modulators on Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 225
Copyright
Copyright © Materials Research Society 1992

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References

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