Article contents
ALD of Lanthanum Aluminate Using Lanthanum Formamidinate Precursor
Published online by Cambridge University Press: 01 February 2011
Abstract
The physical and electrical characteristics of La2O3 and LaAlO3 films, deposited by atomic layer deposition (ALD) and using a new La formamidinate precursor (La-FAMD), were investigated. The La-FAMD precursor has superior thermal stability and is also the most volatile La source available today. The vapor pressure of La-FAMD, maintained at 100 ºC, is approximately 60 times higher than the commercial available source La-THD (THD = tetramethylheptanedionato).
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2008
References
- 4
- Cited by