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Al mole fraction dependence of deep levels in AlGaN/GaN-HEMT structures estimated by CV profiling

Published online by Cambridge University Press:  01 February 2011

Junjiroh Kikawa ,
Imada Katsuhiro ,
Yamada Tomoyuki ,
Tsuchiya Tadayoshi ,
Hiroyama Yuichi ,
Iwami Masayuki ,
Araki Tsutomu ,
Suzuki Akira  and
Nanishi Yasushi
Junjiroh Kikawa
Affiliation:
[email protected], R&D Association for Future Electron Devices, 1-1-1 Noji-Higashi, Kusatsu, Shiga, 525-8577, Japan
Imada Katsuhiro
Affiliation:
Advanced HF Devices R&D Center, R&A Association for Future Electron Devices, Kusatsu, Shiga, Japan
Yamada Tomoyuki
Affiliation:
Advanced HF Devices R&D Center, R&A Association for Future Electron Devices, Kusatsu, Shiga, Japan
Tsuchiya Tadayoshi
Affiliation:
Advanced HF Devices R&D Center, R&A Association for Future Electron Devices, Kusatsu, Shiga, Japan
Hiroyama Yuichi
Affiliation:
Advanced HF Devices R&D Center, R&A Association for Future Electron Devices, Kusatsu, Shiga, Japan
Iwami Masayuki
Affiliation:
Advanced HF Devices R&D Center, R&A Association for Future Electron Devices, Kusatsu, Shiga, Japan
Araki Tsutomu
Affiliation:
Department of Photonics, Ritsumeikan University, Kusatsu, Shiga, Japan
Suzuki Akira
Affiliation:
Research Organization of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga, Japan
Nanishi Yasushi
Affiliation:
Department of Photonics, Ritsumeikan University, Kusatsu, Shiga, Japan
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Abstract

Current-voltage (IV) measurements and capacitance-voltage (CV) measurements have been carried out to investigate electrical properties of AlGaN/GaN-HEMT structures. By CV measurements of Schottky barrier diodes (SBDs) with large leak currents, we observed a distinct peak in CV profiling at low frequencies. The integral of this peak was found to have a correlation with a leak current. The behavior of this peak might be described by the Shockley-Read-Hall (SRH) model if we assume this peak is due to a phenomenon of an electron emission and capture by deep levels. Then Quasi-Fermi Level (Imref) at the bias point where this peak appears in CV profiling corresponds to energy depth of deep levels. That energy level can be approximated by Imref of two-dimensional (2D) electron gas. The result of our samples showed that the energy depth of deep levels from the conduction band is distributed from 320meV to 470meV for Al mole fraction from 0.19 to 0.30, respectively.

Keywords

defectselectrical propertiesIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF10-01
Copyright
Copyright © Materials Research Society 2006

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References

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