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Addressable Photosensing Elements for 2-Dimensional Image Sensors Using a-Si Alloy P-I-N Diodes

Published online by Cambridge University Press:  01 January 1993

G. De Cesare ,
P. Di Rosa ,
S. La Monica ,
R. Salotti ,
R. Rita  and
L. Schirone
G. De Cesare
Affiliation:
Universitá, Dip. Ing. Elettronica, Via Eudossiana 18, 00184 Roma, Italy
P. Di Rosa
Affiliation:
Universitá, Dip. Ing. Elettronica, Via Eudossiana 18, 00184 Roma, Italy
S. La Monica
Affiliation:
Universitá, Dip. Ing. Elettronica, Via Eudossiana 18, 00184 Roma, Italy
R. Salotti
Affiliation:
Universitá, Dip. Ing. Elettronica, Via Eudossiana 18, 00184 Roma, Italy
R. Rita
Affiliation:
Universitá, Dip. Ing. Elettronica, Via Eudossiana 18, 00184 Roma, Italy
L. Schirone
Affiliation:
Universitá, Dip. Ing. Elettronica, Via Eudossiana 18, 00184 Roma, Italy
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Abstract

We describe amorphous silicon alloy addressable photo-sensitive elements whose operation has been experimentally verified in 2-dimensional image sensors. The investigated structures consist of p-i-n photodiodes (PD) stacked and back-to-back connected to n-i-p blocking diodes (BD). A first developed device is based on a TCO-p+(Si)-i(Si)-n+(Si)- i(SiC)-p+(SiC)-Metal structure. Due to an optimization of the thickness and of the energy gap of the layers, we obtained a rectification ratio between the current levels in forward and reverse bias conditions If/Ir=106, under AM1.5 illumination, filtered at 500 nm. A better rectification ratio If/Ir>106, under white AM 1.5 light, has been achieved by introducing a metallic film inside the n+ layer, for light shielding; this further technological step allows both the independent optimization of BD’s and PD’s structures, and the increase of the operation speed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 933
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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