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X-Ray Rocking Curve Analysis of S-Implanted GaAs

Published online by Cambridge University Press:  21 February 2011

M. Fatemi ,
P.E. Thompson ,
J. Chaudhuri  and
S. Shah
M. Fatemi
Affiliation:
Electronics Science and Technology DivisionNaval Research LaboratoryWashington, DC 20375-5000
P.E. Thompson
Affiliation:
Electronics Science and Technology DivisionNaval Research LaboratoryWashington, DC 20375-5000
J. Chaudhuri
Affiliation:
Department of Mechanical EngineeringWichita State UniversityWichita, KA 67208
S. Shah
Affiliation:
Department of Mechanical EngineeringWichita State UniversityWichita, KA 67208
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Abstract

The effect of rapid thermal annealing on strain reduction in 1.15 MeV S-implanted GaAs wafers irradiated to a dose of 5 × 1014/cm2 has been studied by double-crystal x-ray diffraction technique. X-ray rocking curves exhibit characteristic thin film fringes between the peak of unstrained GaAs and the major peak of the strained region. The maximum strain, i.e., the separation between the two peaks, as well as the number of minor fringes decreases with increasing RTA temperature, while the relative spacing between the fringes remains constant. At temperatures above 900°C, the main peaks begin to overlap; however, a residual positive strain can be measured for temperatures as high as 1100°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 93
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Paine, B.M., Hurvitz, N.N., and Speriosu, V.S., J. Appl. Phys. 61(4),15 1335–1339 (1987).CrossRefGoogle Scholar
2. Prilepskii, M.V., Sukhodreva, I.M., and Cheryukanova, L.D., Soy. Phys. Tech. Phys. 27, 384 (1982).Google Scholar
3. Kalugina, G.F., Komaleeva, F.N., Mordkovich, V.N., Sukhodreva, I.M., and Temper, E.M., Soy. Phys. Semicond. 16, 230 (1982).Google Scholar
4. Wie, C.R., Tombrello, T.A., and Vreeland, T. Jr., J. Appl. Phys. 59(11), 3743–3746 (1986).CrossRefGoogle Scholar
5. Speriosu, V.S., J. Appl. Phys. 52(10), 6094–6103 (1981).CrossRefGoogle Scholar
6. Thompson, P.E. and Dietrich, H.B., J. Electrochem. Soc., May 1988 (to be published).Google Scholar
7. Winterbon, K.B., Appl. Phys. Lett. 42(2), 205–206 (1983).CrossRefGoogle Scholar