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Wide-gap CIGS solar cells with Zn1-yMgyO transparent conducting film

Published online by Cambridge University Press:  01 February 2011

K. Matsubara
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
A. Yamada
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
S. Ishizuka
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
K. Sakurai
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
H. Tampo
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
Y. Kimura
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
S. Nakamura
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
M. Yonemura
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
H. Nakanishi
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
S. Niki
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
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Abstract

Zn1-yMgyO bandgap controllable transparent conducting films were used for the wide-gap Cu(In1-xGax)Se2 thin film solar cells. Undoped Zn1-yMgyO and Al doped Zn1-yMgyO films were deposited by co-sputtering using a carousel type sputtering apparatus. Zn1-yMgyO films with Mg content y of up to 0.10 were examined. For Cu(In1-xGax)Se2 with band gap energy ˜1.38 eV, the cell performance was slightly improved by using Zn1-yMgyO and Al doped Zn1-yMgyO instead of ZnO and Al doped ZnO. An unexpected improvement of short circuit current density was observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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