Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-02T16:49:00.301Z Has data issue: false hasContentIssue false
  • English
  • Français

VHF Plasma Deposition of μc-Si p-Layer Materials

Published online by Cambridge University Press:  15 February 2011

X. Deng ,
S. J. Jones ,
T. Liu ,
M. Izu ,
S. R. Ovshinsky  and
K. Hoffman
X. Deng
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan 48084
S. J. Jones
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan 48084
T. Liu
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan 48084
M. Izu
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan 48084
S. R. Ovshinsky
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan 48084
K. Hoffman
Affiliation:
United Solar Systems Corp., Troy, Michigan 48084
Get access

Abstract

Microcrystalline silicon (μc-Si) p-layers have been widely used in amorphous silicon (a-Si) solar cell research and manufacturing to achieve record high solar cell efficiency. In order to further improve the solar cell performance and achieve wider parameter windows for the process conditions, we studied the deposition of high quality μc-Si p-layer material using a very high frequency (VHF) plasma enhanced CVD process. A design of experiment (DOE) approach was used for the exploration and optimization of deposition parameters. The usage of DOE leads to a quick optimization of the deposition process within a short time frame. In addition, by using a modified VHF deposition process, we have improved the solar cell blue response which leads to a 6–10% improvement in the solar cell efficiency. Such an improvement is likely due to an improved microcrystalline formation in the p-layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 795
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Guha, S., Yang, J., Nath, P., and Hack, M., Appl. Phys. Lett. 49, 218 (1986).Google Scholar
2. Yang, J., Ross, R., Glatfelter, T., Mohr, R., Hammond, G., Bernotaitis, C., Chen, E., Burdick, J., Hopson, M. and Guha, S., Proc. 20th IEEE PV. Spec. Conf. 241 (1988).Google Scholar
3. Izu, M., Deng, X., Krisko, A., Whelan, K., Young, R., Ovshinsky, H. C, Narasimhan, K. L. and Ovshinsky, S. R., Proc. 23rd IEEE PV Spec. Conf., 919 (1993).Google Scholar
4. Guha, S., Yang, J., Banerjee, A., Glatfelter, T., Hoffman, K., Ovshinsky, S. R., Izu, M., Ovshinsky, S.R., and Deng, X., Proc. MRS Proc. 336, 645 (1994).Google Scholar
5. Yang, J., Banerjee, A., Guha, S., in Proc. of NREL/SNL Photovoltaic Program Review Meeting, Nov. 18–22, 1996, Lakewood, CO.Google Scholar
6. Finger, F. et al., Appl. Phys. Lett, 65, 2588 (1994).Google Scholar
7. Heintze, M., Zedütz, R. and Bauer, S.H., MRS Proc. 297, 49 (1993).Google Scholar
8. For this study, we mostly used Statgraphics Plus software by Manugistics, Inc., Version 7, (1993).Google Scholar
9. Due to the proprietary nature of this process, the details of the modified VHF process is not disclosed at this time while a patent application for the process is being prepared.Google Scholar