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Vacancy-Type Defects in Ion-Implanted Si Studied By Slow Positron Beam
Published online by Cambridge University Press: 26 February 2011
Abstract
Variable-energy positron beam studies have been made on ion implanted silicon. After 35, 60 and 100 keV H+ implantation a clear separation between vacancy and H atom distributions was found. In 100 keV As+ and P+ implanted Si the damaged layer extends to 300 and 400 nm, respectively, far beyond the the range of implanted atoms and the amorphous layer. Effect of thermal and laser annealing is also discussed.
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- Copyright © Materials Research Society 1988
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