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Published online by Cambridge University Press: 10 February 2011
The combination of self-organized growth on high-index substrates with lithographic patterning and atomic hydrogen assistance allows the fabrication of GaAs quantum wires and quantum dots as well as coupled wire-dot arrays with superior structural and electronic properties by molecular beam epitaxy. The selectivity of patterned growth on high-index substrates differs qualitatively from that on low-index ones thus producing quantum wire and quantum dot structures which fulfill the stringent criteria on the geometrical features to be met for useful devices.