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Ultra-Shallow P+/N Junctions Formed by SiF4 Preamorphization and BF3 Implantation Using Plasma Immersion Ion Implantation

Published online by Cambridge University Press:  25 February 2011

Erin C. Jones ,
Seongil Im  and
Nathan W. Cheung
Erin C. Jones
Affiliation:
Plasma Assisted Materials Processing Laboratory, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
Seongil Im
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
Nathan W. Cheung
Affiliation:
Plasma Assisted Materials Processing Laboratory, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
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Abstract

Sub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4–6 keV and 2 keV, respectively. The amorphous region formed by SiF4 im-plantion is shown to be effective in slowing B diffusion during a 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrys-tallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 255
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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