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Transmission Electron Microscope Studies of O, C, N Precipitation in Crystalline Silicon

Published online by Cambridge University Press:  28 February 2011

A. Bourret
A. Bourret*
Affiliation:
DRF/Service de Physique/S, CEN Grenoble, 85 X, 38041 Grenoble Cédex, France
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Abstract

The understanding of the precipitation phenomena of light non dopant Impurities has been recently improved thanks to high resolution electron microscopy and microanalysis. After a one-step annealing in Czochralski silicon long coesite (SIO2) ribbons are formed between 485° and 750°C; amorphous platelets (SIOx with x =1. 2 to 2) are formed between 650°C -1050°C. Silicon Interstitlals generated during the precipitation partly relax the strain energy associated with the volume change. These Interstltlals are also able to precipitate In various forms. After a two-step annealing both platelets and/or octahedra containing amorphous SIOx are formed. The role of carbon on oxygen precipitation Is important: It changes the nucleation parameters and gives a retardation phenomena In a two-step annealing treatment. Similar phenomena are observed in oxygen implanted silicon. The nucleation and growth process able to explain these observations is far from being well understood. The SIO2 polymorphism, the Important role of SI Interstitials and the mutual attraction between oxygen and carbon are some of the ingredients which explain this complexity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 223
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

[1] Bourret, A., In Thirteeth International Conference on Defects in Semiconductors, edited by KimerlIng, L. C. and Parsey, J. M. (The Met. Soc. of AIME, 1984) p. 129 Google Scholar
[2] Bender, H.,Phys. Stat. Sol. (a) 86. 245 (1984)CrossRefGoogle Scholar
[3] Bergholz, W.. Hutchison, J.L. and Pirouz, P., submitted to J. Appl. Phys.Google Scholar
[4] Carpenter, R.W.. Chan, I., Tsai, H.L., Varker, C. and Demer, L.J. In Defects In Semiconductors II, edited by Mahajan, S. and Corbett, J. W. (North Holland. New York, 1983) p. 195 Google Scholar
[5] Christian, J.W.. In Physical Metallurgy, edited by Cahn, R.W. (North Holland, Amsterdam, 1965), p. 443 Google Scholar
[6] Bourret, A., Desseaux, J. and Renault, A., Phil. Mag. A 45, 1 (1982)CrossRefGoogle Scholar
[7] A. Olsen. and Spence, J.C.H., Phil. Mag. A 43, 945 (1981)Google Scholar
[8] D'Anterroches, C. and Bourret, A., Phil. Mag. A, 49, 783(1984)CrossRefGoogle Scholar
[9] Gibson, J. M.. Ultramlcroscopy 14, 1 (1984)CrossRefGoogle Scholar
[10] Fields, P.M. and Cowley, J.M., Acta Cryst. A 34. 103 (1978)CrossRefGoogle Scholar
[11] Kim, Y., Spence, J.C.H., Long, N. and Bergholz, W., This conferenceGoogle Scholar
[12] Chan, I.Y.T.. Carpenter, R.W., Varker, C.J.. Chang, L. and Demer, L.J. In Proc. Ann. Meeting EMSA, Edited by Bailey, G.W. (Claytors Pub. Div.. Baton Rouge. 1982), p. 500 CrossRefGoogle Scholar
[13] Bourret, A., Colliex, C. and Trebbia, P.. J. Physique-Lettres, 44, L33 (1983)CrossRefGoogle Scholar
[14] Bailey, W.E.. Bowling, R A. and Bean, K.E., J. Electrochem. Soc., 132, 1721 (1985)CrossRefGoogle Scholar
[15] Bourret, A., J. Physique C4. 9, 227 (1983)Google Scholar
[16] Fraundorf, G., Fraundorf, P., Craven, R.A., Frederick, R.A., Moody, J.W. and Shaw, R.W., J. Electrochem. Soc. 132, 1701 (1985)CrossRefGoogle Scholar
[17] Binns, M.J., Brown, W.P., Wilkes, J. G, Newman, R.C., Livingstone, F.M., Messoloras, S. and Stewart, R. J., Appl. Phys. Lett. 42, 525 (1983)CrossRefGoogle Scholar
[18] Bergholz, W.. Pirouz, P.. and Hutchison, J.L. in Thirteeth International Conference on Defects in Semiconductors. 42 p. 717 (1983)Google Scholar
[19] Bourret, A., Hinze, E. and Hochheimer, H. D. submitted to Phys. and Chem. of mineralsGoogle Scholar
[20] Bender, H.. Claeys, C.. Landuyt, J. Van, Declerck, G., Amelinckx, S. and Van Overstraeten, R., in Tirteeth International Conference in Semiconductors, 42 p. 587Google Scholar
[21] Ourmazd, A., Schroter, W. and Bourret, A., J. Appl. Phys. 56. 1670 (1984)CrossRefGoogle Scholar
[22] Bender, H.. PhD Thesis, Antwerpen, 1984 Google Scholar
[23] Livingston, F.M., Messoloras, S. Newman, R. C., Pike, B.C. and Stewart, R.J., Binns, M. J., Brown, W. P. and Wilkes, J. G., J. of Physics C (in press)Google Scholar
[24] Inoue, N.. Osaka, J. and Wada, K., J. Electrochem. Soc. 129. 2780 (1982)CrossRefGoogle Scholar
[25] Ponce, F. A., Hahn, S., Yamashita, T., Scott, M. and Carruthers, J. R.. In Inst. Phys. Conf. Ser. n° 67 (The Institute of Physics London 1983) p. 65Google Scholar
[26] Bourret, A., Thibault-Desseaux, J. and Seidman, D. N., J. Appl. Phys. 55. 825 (1984)CrossRefGoogle Scholar
[27] Wada, K., Inoue, N. and Kohra, K., J. of Crystal Growth, 49, 749 (1980)CrossRefGoogle Scholar
[28] Gaworzewski, P., Hild, E., Kirscht, F.G.. and Vecsernyes, L., Phys. Stat. Sol. (a) 85, 133 (1984)CrossRefGoogle Scholar
[29] Shimura, F.. J. of Cryst. Growth, 54, 588 (1981)CrossRefGoogle Scholar
[30] Ponce, F.A., Yamashita, T. and Hahn, S., Appl. Phys. Lett., 43, 1051 (1983)CrossRefGoogle Scholar
[31] Claeys, C., Bender, H., Declerck, G., Van Landuyt, J., Overstraeten, R. Van and Amelinckx, S., Physica. 116B 148 (1983)Google Scholar
[32] Bean, A.R. and Newman, R.C., J. Phys. Chem. Solids, 32, 1211 (1971)CrossRefGoogle Scholar
[33] Fraundorf., P. Fraundorf, G. K; and Shimura, F., J. Appl. Phys. In pressGoogle Scholar
[34] Ogino, M.. Appl. Phys. Lett. 41. 847 (1982)CrossRefGoogle Scholar
[35] Kanamori, M. and Tsuya, H.. Jap. J. of Appl. Phys. 24, 557 (1985)CrossRefGoogle Scholar
[36] Tan, T.Y. and Kung, C.Y.. J. Appl. Phys. - in pressGoogle Scholar
[37] Fathy, D.. Krivanek, O. L.. Carpenter, R. W. and Wilson, S. R. in Inst. Phys. Conf. Ser. n° 67 (The Institute of Physics - London 1983) p. 479 Google Scholar
[38] Holland, O.W.. Sjoreen, T.P.. Fathy, D. and Narayan, J.. Appl. Phys. Lett. 45 1081(1984)CrossRefGoogle Scholar
[39] Hemment., P. L. F.. Maydell-Ondrusz., E. Stevens, K. G.. Kilner, J. A. and Butcher., J. Vacuum. 34. 203. (1984)CrossRefGoogle Scholar
[40] Carpenter, R. W.. Vanderschaeve, G. and Clure, D. Mc. in Proc. of the 43 rd Annual Meeting EMSA (Ed. Bailey, G.W.. San Fransisco Press 1985) p.360CrossRefGoogle Scholar
[41] Jaussaud, C.. Stoemenos, J.. Margail, J.. Dupuy, M.. Blanchard, B. and Bruel, M.. Appl. Phys. Lett. 46. 1064 (1985)CrossRefGoogle Scholar
[42] Liliental, Z.. Carpenter., R.W. Fathy, D. and Kelly, J.C. In Mat. Res. Soc. Symp. Proc. 25 (Elsevier Science Pub. Co. 1984) p. 525 Google Scholar
[43] Prunier., C. Phd Thesis. Grenoble (1985)Google Scholar
[44] Bergholz, W.. Hutchison, J. L. and Pirouz, P.. in Inst. Phys. Conf. Ser. No 76 Phd Thesis. Grenoble (1985) p. 11 Google Scholar
[45] Tan, T.Y., Foell, H., Mader, S. and Krakow, W. in Defects in Semiconductors, edited by Narayan, J. and Tan, T. Y. (North Holland, New York 1981) p. 179 Google Scholar