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Ti-doped Gallium Phosphide Layers with Concentrations Above the Mott Limit

Published online by Cambridge University Press:  31 January 2011

Javier Olea Ariza ,
David Pastor ,
María Toledano-Luque ,
Ignacio Mártil ,
Germán González-Díaz ,
Jordi Ibánez ,
Ramón Cuscó  and
Luis Artús
Javier Olea Ariza
Affiliation:
[email protected], Facultad de Ciencias Fisicas de la Universidad Complutense de Madrid, Fisica Aplicada III, Madrid, Spain
David Pastor
Affiliation:
[email protected]
María Toledano-Luque
Affiliation:
[email protected], Facultad de Ciencias Fisicas de la Universidad Complutense de Madrid, Fisica Aplicada III, Madrid, Spain
Ignacio Mártil
Affiliation:
[email protected], United States
Germán González-Díaz
Affiliation:
[email protected], United States
Jordi Ibánez
Affiliation:
[email protected], Consejo Superior de Investigaciones Científicas (C.S.I.C.), Institut Jaume Almera, Barcelona, Spain
Ramón Cuscó
Affiliation:
[email protected], Consejo Superior de Investigaciones Científicas (C.S.I.C.), Institut Jaume Almera, Barcelona, Spain
Luis Artús
Affiliation:
[email protected], Consejo Superior de Investigaciones Científicas (C.S.I.C.), Institut Jaume Almera, Barcelona, Spain
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Abstract

We have studied the Pulsed-Laser Melting (PLM) effects on Ti implanted GaP to form an Intermediate Band (IB). Structural analysis has been carried out by means of Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), Raman spectroscopy and Glancing Incidence X-Ray Diffraction (GIXRD). After the PLM annealing, Ti concentration is over the Mott limit. Nevertheless, the Raman spectra show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding to the GaP unannealed substrate. This conclusion has been corroborated by GIXRD measurements. As a result of the polycrystalline lattice, a drop of the mobility is produced.

Keywords

III-Vlaser annealingion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q03-17
Copyright
Copyright © Materials Research Society 2010

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