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Thermal analysis of nonvolatile and non rotation phase change memory cell

Published online by Cambridge University Press:  01 February 2011

L. P. Shi ,
T. C. Chong ,
J. M. Li ,
H. X. Yang  and
J. Q. Mou
L. P. Shi
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore117608; Email: [email protected]
T. C. Chong
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore117608; Email: [email protected]
J. M. Li
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore117608; Email: [email protected]
H. X. Yang
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore117608; Email: [email protected]
J. Q. Mou
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore117608; Email: [email protected]
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Abstract

In this paper, a three-dimensional finite-element modeling is performed for the analyses of Chalcogenide Random Access Memory (C-RAM), a non-rotation nonvolatile phase change memory cell. The thermal effect generated by an incident electric pulse was mainly discussed. Thermal performances of the cell as a result of electrical and geometrical variations were quantified. Current density distribution, temperature profiles, temperature history, heating rate, cooling rate, and heat flow characteristics were obtained and analyzed. The study is useful for the failure analysis of the C-RAM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , HH1.8
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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2. Lai, Stefan and Lowrey, Tyler, “OUM-A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications”, IEDM 2001.Google Scholar