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Theoretical Modeling of Chemical Vapor Deposition of Silicon Carbide in a Hot Wall Reactor

Published online by Cambridge University Press:  15 February 2011

Feng Gao  and
Ray Y. Lin
Feng Gao
Affiliation:
University of Cincinnati, Department of Materials Science and Engineering, Mail Box #12, Cincinnati, OH 45221
Ray Y. Lin
Affiliation:
University of Cincinnati, Department of Materials Science and Engineering, Mail Box #12, Cincinnati, OH 45221
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Abstract

A theoretical model, which describes the coupled hydrodynamics, mass transport and chemical reaction, has been developed to simulate chemical vapor deposition (CVD) of silicon carbide (SiC) from gas mixture of methyltrichlorosilane (MTS), hydrogen and argon in a hot wall reactor. In the model analysis, the governing equations were developed in the cylindrical coordinate, and solved numerically by using a finite difference method. A kinetic rate expression of CVD-SiC deposition from the gas mixture was obtained from this study. The deposition rate has an Arrhenius-type dependence on the deposition temperature and is first order with respect to the MTS concentration. Estimated activation energy is 254 kJ/mol. Predicted deposition rate profiles by the model analysis incorporated with the obtained kinetic rate expression showed excellent agreement with experimental data over a variety of applied deposition conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 177
Copyright
Copyright © Materials Research Society 1994

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