Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-29T07:28:59.475Z Has data issue: false hasContentIssue false

Temperature Dependence of the Linewidth and Peak Position of the Intersubband Infrared Absorption in GaAs/Al0.3Ga0.7As Quantum Wells

Published online by Cambridge University Press:  25 February 2011

M. O. Manasreh
Affiliation:
Electronic Technology Laboratory (WRDC/ELRA), WPAFB, OH 45433
C. E. Stutz
Affiliation:
Electronic Technology Laboratory (WRDC/ELRA), WPAFB, OH 45433
K. R. Evans
Affiliation:
Electronic Technology Laboratory (WRDC/ELRA), WPAFB, OH 45433
F. Szmulowicz
Affiliation:
University of Dayton Research Institute, 300 College Park Avenue, Dayton, OH 45469
D. W. Fischer
Affiliation:
Materials Laboratory (WRDC/MLPO), WPAFB, OH 45433
Get access

Abstract

The linewidth and peak position (vo) of the intersubband transition (IT) in GaAs/Al0.3Ga0.7As multiple quantum wells are studied as a function of temperature using the infrared absorption technique. We find that electrons in the GaAs well are weakly coupled to the GaAs normal optical phonon mode. The total integrated area of IT absorption is found to be approximately constant in the samples that were doped in the well but temperature dependent in the samples that were doped in the barrier. We also find that vo increases as the temperature decreases. This blue shift is found to increase as the dopant concentration is increased. We calculated the absorption spectrum in a nonparabolic-anisotropic envelope function approximation including temperature dependent effective masses, nonparbolicity, conduction band offsets, the Fermi level, and lineshape broadening. Our results indicate that a large manybody correction, in particular an exchange interaction (Eexch) for the ground state, is necessary to account for the observed blue shift as the dopant concentration increases.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. West, L. C. and Eglash, S. J., Appl. Phys. Lett. 46, 1156 (1985).Google Scholar
2. Levine, B. F., Bethea, C. G., Choi, K. K., Walker, J., and Malik, R. J., Appl. Phys. Lett. 53, 231 (1988).CrossRefGoogle Scholar
3. Covington, B. C., Lee, C. C., Hu, B. H., Taylor, H. F., and Streit, D. C., Appl. Phys. Lett. 54, 2145 (1989).CrossRefGoogle Scholar
4. Levine, B. F., Bethea, C. G., Hasnain, G., Walker, J., and Malik, R. J., Appl. Phys. Lett. 5, 296 (1988); B. F. Levine, K. K. Choi, C. G. Bethea, J. Walker, and R. J. Malik, Appl. Phys. Lett. 5Q, 1092 (1987).Google Scholar
5. Harwit, A. and 'Harris, J. S. Jr., Appl. Phys. Lett. 50, 685 (1987).Google Scholar
6. Johnson, N. F., Ehrenreich, H., and Jones, R. V., Appl. Phys. Lett. 53, 180 (1988).CrossRefGoogle Scholar
7. Ekenberg, U., Phys. Rev. B 36, 6152 (1987).Google Scholar
8. Bandara, K. M. S. V., Coon, D. D., Byungsung, O., Lin, Y. F., and Francombe, M. H., Appl. Phys. Lett. 53, 1931 (1988).Google Scholar
9. Watts, R. K., Point Defects in Crystals (Wiley, New York, 1977), chap. 3, p. 75.Google Scholar
10. Waugh, J. L. T. and Dolling, G., Phys. Rev. 132, 2410 (1963).Google Scholar
11. Chemla, D. S., Miller, D. A. B., Smith, P. W., Gossard, A. C., and Wiegmann, W., IEEE J. Quantum Electron. OE- 20, 265 (1984).Google Scholar
12. Wegener, M., Bar-Joseph, I., Sucha, G., Islam, M. N., Sauer, N., Chang, T. Y., and Chemla, D. S., Phys. Rev. B. 2, 12794 (1989).CrossRefGoogle Scholar
13. Zhou, X., Bhattacharya, P. K., Hugo, G., Hong, S. C., and Gulari, E., Appl. Phys. Lett. 5A, 855 (1989).CrossRefGoogle Scholar
14. Blakemore, J. S., J. Appl. Phys. 53, R123 (1982).Google Scholar
15. Varshni, Y. P., Physica 34, 149 (1967).CrossRefGoogle Scholar
16. Adachi, S., J. Appl. Phys. 58, R1 (1985).Google Scholar
17. The IT peak position is obtained from the broadened σ(v), [σ(v)], and is given by: Google Scholar