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Synthesis of Cupric Oxide Films using Mass-Separated Low-Energy O+ Beams

Published online by Cambridge University Press:  25 February 2011

R. Kita ,
T. Hase ,
R. Itti ,
M. Sasaki  and
T. Morishita
R. Kita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
T. Hase
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
R. Itti
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
M. Sasaki
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
T. Morishita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
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Abstract

We report the epitaxial growth of CuO thin films prepared by lowenergy and high-density O+ ion beams mass-separated from an oxygen plasma. We have successfully produced O+ beams of 50 μA/cm2 while maintaining an ambient pressure of 3×10−9 Torr during the growth. CuO grows on MgO(100) with epitaxial relationship of (111)CuO // (100)MgO and [110]CuO // [110]MgO at room temperature and even under conditions where the flux density of O+ beams is at least one order of magnitude lower than the minimum flux density of O2 required to form CuO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 247
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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