Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-06T00:55:08.833Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Morphology of Diamond Thin Films Using Photoinduced Scanning Tunneling Microscopy

Published online by Cambridge University Press:  21 February 2011

D.L. Carroll ,
T. Mercer ,
Y. Liang ,
N.J. Dinardo  and
D. A. Bonnell
D.L. Carroll
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia Pa
T. Mercer
Affiliation:
Department of Physics, Drexel University, Philadelphia Pa, 19104
Y. Liang
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia Pa
N.J. Dinardo
Affiliation:
Department of Physics, Drexel University, Philadelphia Pa, 19104
D. A. Bonnell
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia Pa
Get access

Abstract

Photo-induced conduction in thin insulating films of diamond was used to obtain STM images indicative of film morphology. UV light was used to generate carriers in the conduction band of diamond films grown on Si (111). Tunneling currents could only be established when the tunnel junction was illuminated. Without the light, no current was measured even with the tip in contact with the surface. Two types of films were studied. A CVD grown diamond film with nitrogen impurities and a diamond-like film grown by laser ablation of graphite. Topological detail was compared to that obtained with an AFM. The correspondence between AFM and photoinduced STM images suggests that the STM images are indicative of film morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 483
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Binning, G. and Rohrer, H., Surf. Sci. 126, 236 (1983).Google Scholar
2 Wintterlin, J., Wiechers, J., Brune, H., Gritsch, T., Hofer, H. and Behm, R. J., Phys. Rev. Lett. 62 59 (1989).Google Scholar
3 Hamers, R. J., Annu. Rev. Chem. (1989) 531.Google Scholar
4 Everson, M. P. and Tamor, M. A., J. Mater. Res. 7, 1438 (1991).CrossRefGoogle Scholar
5 Feenstra, R. and Stroscio, J., J.Vac. Sci. Technol. B5, 923 (1991).Google Scholar
6 Rohrer, G. S., Henrich, V. E. and Bonnell, D. A., Science 250, 1239 (1990).CrossRefGoogle Scholar
7 Bube, R., Photoelectric Properties of Semiconductors, Cambridge University Press. (1992).Google Scholar
8 Hamers, R. J. and Markert, K., Phys. Rev. Lett. 1051 (1990).Google Scholar
9 Hamers, R. J. and Cahill, D. G., Appl. Phys. Lett. 57, 2031 (1990).Google Scholar
10 Rohrer, G. S. and Bonnell, D. A., J. Am. Ceram. Soc. 73, 3257 (1990).Google Scholar
11 Bonnell, D. A., J. Vac. Sci.Technol. B9, 551 (1991).Google Scholar
12 Okano, K., Kiyota, H., Iwasaki, T., Kurosu, T., lida, M. and Nakamura, T., Appl. Phys. Lett. 58, 840 (1991).Google Scholar