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Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy
Published online by Cambridge University Press: 25 February 2011
Abstract
To study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.
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- Copyright © Materials Research Society 1993