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A Study of MOCVD-Grown Gallium Nitride Nucleation Layers on Sapphire
Published online by Cambridge University Press: 25 February 2011
Abstract
Nucleation layers of GaN have been deposited in an MOCVD reactor on (0001) sapphire, over a range of temperatures and layer thicknesses, using either N2 or H2 carrier gas. The layers have been found to be continuous, textured films as deposited at low temperatures (600°C), but to reorder upon annealing, segregating into nucleation sites which exhibit the normal heteroepitaxial relationship with the sapphire substrate.
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- Copyright © Materials Research Society 1993
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