Gallium Nitride (GaN) is a promising wide band gap semiconductor material for many optoelectronic applications, especially in the near UV range. Over the past several years, an extensive technical effort has been focused on improving the quality of GaN films through various overgrowth techniques such as epitaxial lateral overgrowth (ELOG), facet controlled epitaxial lateral overgrowth (FACELO), and Pendeoepitaxy. ELOG has been shown to reduce the density of threading dislocations by up to five orders of magnitude [1], however a complete physical model describing lateral overgrowth is needed in order to take full advantage of the process. A lateral overgrowth model will allow for the design and fabrication of three dimensional structures that can lead to novel devices and also to efficient biosensors by integrating micro and nano channels on the same chip as the optoelectronic components.

A two-step process has been used to successfully control the geometry of overgrown GaN. Conditions have been identified which give a reduced lateral growth rate, in order to allow expansion of the {112n} plane to form vertical sidewalls and for the design of channel width. These geometries are being examined for possible application in laser diode and micro-channel fabrication for integrating bio-agent detection modules.