The ion implantation of boron remains the most practical means of forming shallow and ultra-shallow p+/n junctions in silicon. A high conductive junction requires both a large density of dopant atoms and electrical activation amongst these. While it is possible to simply higher doses of boron at lower energies, the potential benefits of the changes are often muted by the electrical deactivation of the boron was occurs through a clustering process. Therefore, it is important to do understanding of the kinetics and transients involved in these proces.

It has been shown that ion implanted boron clusters with interst residual from the implantation process. These clusters are immobile, fractionally or totally electrically inactive, and very thermally state study a series of experiments were conducted in order to investigate processes. In addition to this, a means of utilizing X-ray Diffractio to correlate electrical activity to the rocking curve has been development