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Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

Published online by Cambridge University Press:  11 February 2011

Yoshifumi Aoi ,
Kojiro Ono ,
Kunio Sakurada  and
Eiji Kamijo
Yoshifumi Aoi
Affiliation:
Department of Materials Chemistry, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520–2194, Japan
Kojiro Ono
Affiliation:
Department of Materials Chemistry, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520–2194, Japan
Kunio Sakurada
Affiliation:
Department of Materials Chemistry, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520–2194, Japan
Eiji Kamijo
Affiliation:
Department of Materials Chemistry, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520–2194, Japan
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Abstract

Amorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 750: Symposium Y – Surface Engineering 2002–Synthesis, Characterization and Applications , 2002 , Y5.1
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Liu, A. and Cohen, M., Science 245, 841 (1989);Google Scholar
Liu, A. and Cohen, M., Phys. Rev. B 41, 10727 (1990).Google Scholar
2. Muhl, S. and Mendez, J. M., Diamond Relat. Mater. 8, 1809 (1999).Google Scholar
3. Aoi, Y., Ono, K., and Kamijo, E., J. Appl. Phys. 86, 2318 (1999);Google Scholar
Aoi, Y., Ono, K., Sakurada, K., Kamijo, E., Sasaki, M., and Sakayama, K., Thin Solid Films 389, 62 (2001).Google Scholar
4. Quiros, C., Prieto, P., Fernandez, A., Eizalde, E., Morant, C., Schlogi, R., Spillecke, O., and Sanz, J. M., J. Vac. Sci. Technol. A 18, 515 (2000).Google Scholar
5. Hellgren, N., Guo, J., Sathe, C., Agui, A., Nordgren, J., Luo, Y., Agren, H., and Sundgren, J. -E., App. Phys. Lett. 79, 4348 (2001).Google Scholar
6. Mott, N. F. and Davis, E. A., Electronic Process in Non Crystalline Materials (1971).Google Scholar
7. Cheah, L. K., Shi, X., Shi, J. R., Liu, E. J., and Silva, S. R. P., J. Non-Cryst. Solid 242, 40 (1998).Google Scholar
8. Rohwer, K., Hammer, P., Thiele, J. -U., Gissler, W., Blaudeck, P., Frauenheim, T., and Meissner, D., J. Non-Cryst. Solid 137, 843 (1991).Google Scholar