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Structural Properties of Microcrystalline Si Solar Cells

Published online by Cambridge University Press:  17 March 2011

M. Luysberg
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, 52425 Jülich, Germany
C. Scholten
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, 52425 Jülich, Germany
L. Houben
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, 52425 Jülich, Germany
R. Carius
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
F. Finger
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
O. Vetterl
Affiliation:
Institut für Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
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Abstract

The structural properties of nip-µc-Si:H solar cells are investigated by transmission electron microscopy, X-ray diffraction and Raman spectroscopy. Different structural compositions are obtained by variation of the gas mixture during preparation by plasma enhanced chemical vapour deposition. Nucleation and growth of the n-layer onto textured TCO substrate was found to be similar to the growth on glass substrates. The growth of the i-layer follows a local epitaxy. This implies that the structure of the n-layer is of special importance regarding the control of the microstructure in microcrystalline Si nip solar cells.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Meier, J., Torres, P., Platz, R., Dubail, S., Kroll, U., Selvan, J.A. Anna, Vaucher, N. Pellaton, Hof, Ch., Fischer, D., Keppner, H., Shah, A., Ufert, K.-D., Giannoulès, P., Koehler, J., Mat. Res. Soc. Symp. Proc. 420, 3 (1996)Google Scholar
[2] Saito, K., Sano, M., Matuda, K., Kondo, T., Nishimoto, T., Ogawa, K., Kajita, I., Proc. 2nd PVSEC World Conf. ed. Schmid, J., Ossenbrink, H.A., Helm, P., Ehmann, H., Dunlop, E.D. (European Comission, Ispra, Italy 1998) p. 351 Google Scholar
[3] Yamamoto, K., Yoshimi, M., Tawada, Y., Okamoto, Y., Nakajima, A., Technical Digest of the 11th PVSEC, Sapporo, Japan (1999)Google Scholar
[4] Vetterl, O., Finger, F., Carius, R., Hapke, P., Houben, L., Kluth, O., Lambertz, A., Mück, A., Rech, B., Wagner, H., Solar Energy Materials & Solar Cells 62, 97 (2000).Google Scholar
[5] Houben, L., Luysberg, M., Hapke, P., Carius, R., Finger, F., Wagner, H., Phil. Mag. A 77, 1447 (1998)Google Scholar
[6] Tsai, C. C., in Amorphous Silicon and Related Materials, edited. by Fritzsche, H. (World Scientific, Singapore, 1988), p.123 Google Scholar
[7] Luysberg, M., Hapke, P., Carius, R., Finger, F., Phil. Mag. A 75, 31 (1997)Google Scholar
[8] Tzolov, M., Finger, F., Carius, R., and Hapke, P., J. Appl. Phys. 81, 11 (1997)Google Scholar
[9] Finger, F., Vetterl, O., Carius, R., Lambertz, A., Scholten, C., Houben, L., Luysberg, M. in: Proceedings of the 11th ISCMP, Varna (BG), September 4 – 8, 2000 Google Scholar