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Structural and Electrical Properties of Colossal Magnetoresistive LSMO Thin Films Prepared by KrF Laser Ablation Method

Published online by Cambridge University Press:  21 March 2011

Fumiaki Mitsugi
Affiliation:
Department of the Electrical and Computer Engineering, Kumamoto University, Kurokami, Kumamoto 860-8555, Japan
Tomoaki Ikegami
Affiliation:
Department of the Electrical and Computer Engineering, Kumamoto University, Kurokami, Kumamoto 860-8555, Japan
Kenji Ebihara
Affiliation:
Department of the Electrical and Computer Engineering, Kumamoto University, Kurokami, Kumamoto 860-8555, Japan
Jagdish Narayan
Affiliation:
Department of the Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916, USA
Alexander M. Grishin
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-10044 Stockholm, Sweden
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Abstract

We prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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