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Statistical Analysis of Electromigration Lifetimes and VoidEvolution for Cu Interconnects

Published online by Cambridge University Press:  17 March 2011

M. Hauschildt ,
M. Gall ,
S. Thrasher ,
P. Justison ,
L. Michaelson ,
R. Hernandez ,
H. Kawasaki  and
P. S. Ho
M. Hauschildt
Affiliation:
The University of Texas at Austin, PRC/MER, Mail Code R8650, Austin, TX 78712
M. Gall
Affiliation:
Freescale Semiconductor, MD K10, 3501 Ed Bluestein Blvd, Austin, TX 78721
S. Thrasher
Affiliation:
Freescale Semiconductor, MD K10, 3501 Ed Bluestein Blvd, Austin, TX 78721
P. Justison
Affiliation:
Freescale Semiconductor, MD K10, 3501 Ed Bluestein Blvd, Austin, TX 78721
L. Michaelson
Affiliation:
Freescale Semiconductor, MD K10, 3501 Ed Bluestein Blvd, Austin, TX 78721
R. Hernandez
Affiliation:
Freescale Semiconductor, MD K10, 3501 Ed Bluestein Blvd, Austin, TX 78721
H. Kawasaki
Affiliation:
Freescale Semiconductor, MD K10, 3501 Ed Bluestein Blvd, Austin, TX 78721
P. S. Ho
Affiliation:
The University of Texas at Austin, PRC/MER, Mail Code R8650, Austin, TX 78712
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Abstract

Electromigration (EM) failure statistics and the origin of the lognormaldeviation (σ) for Cu interconnects have been investigated by analyzing thelifetime statistics and void size distributions at various stages during EMtesting. Experiments were performed on 0.18 μm wide Cu interconnects withtests terminated after specific amounts of resistance increases, or after aspecified test time. Void size distributions of resistance-based, as well astime-based EM tests were obtained using focused ion beam (FIB) microscopy.The lifetime and void size distributions were found to follow lognormaldistribution functions. The σ values of EM lifetime and time-based void sizedistributions decrease with higher percentages of resistance increase,reaching an asymptotic value of σ ∼ 0.14. In contrast, σ values ofresistance-based void size distributions are significantly smaller and donot show an obvious dependence on time. The statistics of resistance-basedvoid size distributions can mainly be accounted for by geometricalvariations of the void shape, while the statistics of time-based void sizedistributions requires consideration of kinetic aspects of the EM process.The σ values of EM lifetime distributions at long times can be simulatedbased on measured void size distributions, taking into account geometricaland experimental factors of EM. In contrast, for short times the statisticsof initial void formation and the kinetics of interfacial mass transporthave to be considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F7.7
Copyright
Copyright © Materials Research Society 2004

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