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Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation

Published online by Cambridge University Press:  17 March 2011

Alexandre Cuenat  and
Michael J. Aziz
Alexandre Cuenat
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
Michael J. Aziz
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

We study the formation and self-organization of “ripples” and “dots” spontaneously appearing during uniform irradiation of Si, Ge, and GaSb with energetic ion beams. Features have been produced both with sub-keV unfocused Ar+ ions and with a 30 keV Ga+ Focused Ion Beam. We follow the evolution of features from small amplitude to “nanospikes” with increasing ion dose. It appears that the edge of the sputtered region influences the patterns formed, an effect that may make it possible to guide the self-organization by the imposition of lateral boundary conditions on the sputter instability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N2.8
Copyright
Copyright © Materials Research Society 2002

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