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Spin-Dependent Transport in Si Thin-Film Transistors

Published online by Cambridge University Press:  15 February 2011

G. Kawachi ,
C F. O. Graeff ,
M. S. Brandt  and
M. Stutzmann
G. Kawachi
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki, 319–12, Japan
C F. O. Graeff
Affiliation:
Departamento de Fisica e Matematica, FFCLRP-USP Brazil
M. S. Brandt
Affiliation:
Walter Shottky Institut, Technische Universität München, Am Coulombwall, Garching, 85748, Germany
M. Stutzmann
Affiliation:
Walter Shottky Institut, Technische Universität München, Am Coulombwall, Garching, 85748, Germany
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Abstract

Defects and carrier transport processes in silicon based thin-film transistors (TFTs) are investigated by spin-dependent transport (SDT). The resonance signal arising from less than 106 defects in the hydrogenated amorphous silicon (a-Si:H) TFT is detected with a sufficient signal-to-noise ratio. The leakage current mechanism in a-Si:H under high source-drain fields is identified by SDT as electron hopping via defect states located at the interface between undoped a-Si:H and the passivation silicon nitride layer. At temperatures below 100K, spin-dependent hopping of electrons in conduction band tail states is observed. The change of the dominant transport path from extended states conduction to variable range hopping with decreasing temperature is confirmed. SDT measurements on polycrystalline silicon (poly-Si) TFTs having silicon nitride and silicon dioxide as the gate dielectric films reveal differences in the defect structure in these devices. The overall results demonstrate that SDT is a powerful method to probe paramagnetic defects and carrier transport in TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 851
Copyright
Copyright © Materials Research Society 1997

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